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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2236

Title: Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique
Authors: KUMAR, EN
MAHETA, VD
PURAWAT, S
ISLAM, AE
OLSEN, C
AHMED, K
ALAM, MA
MAHAPATRA, S
Issue Date: 2007
Publisher: IEEE
Citation: 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,809-812
Abstract: An Ultra-Fast On-The-Fly (UF-OTF) I(DLIN) technique having 1 mu s resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p-MOSFETs. The Nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.
URI: http://dx.doi.org/10.1109/IEDM.2007.4419071
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15493
http://hdl.handle.net/100/2236
ISBN: 978-1-4244-1507-6
Appears in Collections:Proceedings papers

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