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| Title: | Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique |
| Authors: | KUMAR, EN
MAHETA, VD
PURAWAT, S
ISLAM, AE
OLSEN, C
AHMED, K
ALAM, MA
MAHAPATRA, S |
| Issue Date: | 2007 |
| Publisher: | IEEE |
| Citation: | 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,809-812 |
| Abstract: | An Ultra-Fast On-The-Fly (UF-OTF) I(DLIN) technique having 1 mu s resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p-MOSFETs. The Nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored. |
| URI: | http://dx.doi.org/10.1109/IEDM.2007.4419071
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15493
http://hdl.handle.net/100/2236 |
| ISBN: | 978-1-4244-1507-6 |
| Appears in Collections: | Proceedings papers
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