DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
|Title: ||Parameter extraction for advanced MOSFET model using particle swarm optimization|
|Authors: ||THAKKER, RA|
|Issue Date: ||2008|
|Publisher: ||CRC PRESS-TAYLOR & FRANCIS GROUP|
|Citation: ||NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION,845-848|
|Abstract: ||In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimization (PSO) algorithm. I-V measurements are taken on 65 nm technology NMOS devices. For the purpose of comparison, parameter extraction is also carried out using Genetic Algorithm (GA). It is shown that PSO algorithm gives better agreement between measurements and model in comparison to GA and with less computational effort. A novel "memory loss (ML)" operation is introduced in the PSO algorithm for the first time, which further improves algorithm efficiency. The PSO algorithm with ML operation has taken 81 minutes on average to extract parameters of two devices of channel lengths, 70 nm and 1 mu m.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.