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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2130

Title: Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies
Authors: WAGHMARE, PC
PATIL, SB
KUMBHAR, A
DUSANE, RO
RAO, VR
Issue Date: 2002
Publisher: ELSEVIER SCIENCE BV
Citation: MICROELECTRONIC ENGINEERING,61-2,625-629
Abstract: Silicon nitride is considered a promising candidate to replace thermal oxide dielectrics, as the latter is reaching its scaling limits due to the excessive increase in the gate tunneling leakage current. The novel hot wire chemical vapor deposition (HWCVD) technique shows promise for gate quality silicon nitride film yields at 250 degreesC while maintaining their primary advantage of a higher dielectric constant of 7.1. In this paper we report the results of our efforts towards developing ultra-thin HWCVD silicon nitride as an advanced gate dielectric for the replacement of thermal gate oxides in future generations of ultra large scale integration (ULSI) devices. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0167-9317(02)00575-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15363
http://hdl.handle.net/100/2130
ISSN: 0167-9317
Appears in Collections:Proceedings papers

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