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|Title: ||Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on Silicon|
|Authors: ||BANERJEE, S|
|Keywords: ||molecular-beam epitaxy|
quality gaas growth
|Issue Date: ||2010|
|Publisher: ||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation: ||SILICON PHOTONICS V,7606,|
|Abstract: ||We have addressed MBE growth of multilayer In(Ga)As/GaAs QDs by depositing a migration enhanced epitaxy (MEE) grown GaAs layer in between the GaAs/Ge interface. The low temperature (350 degrees C) MEE grown layer is used to complement the GaAs/Ge heterointerface which typically suffers from anti-phase domain disorder due to the polar/nonpolar epitaxy and interdiffusion across the interface. High quality of GaAs growth front on Ge substrate for the subsequent growth of QDs is further ensured by overgrowing the MEE GaAs layer with a thin GaAs layer grown at very slow growth rate (0.1 mu m/hr) at 475 degrees C followed by a thick GaAs at a fast growth rate (1 mu m/hr) at 590 degrees C. AFM, XTEM and PL measurements were done on the MBE grown samples to investigate the morphological and optical properties of the grown QDs. The AFM shows growth of dense QDs. XTEM image shows the heterostructure is free from structural defects. The 25K PL emission peak is at 1060 nm, which is almost similar to the control In(Ga) As/GaAs QD sample grown on GaAs substrate but the observed PL intensity was found lower compared to control sample. This might be due to nonradiative centers created in the barrier layer due to strain in the sample.|
|Appears in Collections:||Proceedings papers|
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