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|Title: ||A detailed temperature dependent Hall study of As-doped ZnO thin films|
|Authors: ||NAGAR, S|
|Keywords: ||pulsed-laser deposition|
|Issue Date: ||2010|
|Publisher: ||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation: ||OXIDE-BASED MATERIALS AND DEVICES,7603,|
|Abstract: ||Successful p-type ZnO thin films have been grown on semi-insulating < 100 > GaAs by Pulsed Laser Deposition Technique followed by Rapid Thermal Annealing (RTA) of the samples. X-ray Diffraction (XRD) results confirmed deposition of < 002 > ZnO verifying its highly c-axis oriented growth. The results also showed that the annealed samples were much more crystalline than the as-grown ones. Atomic Force Microscopy (AFM) results verified uniform deposition of the thin film providing a roughness value as low as 8.5 nm. The stability of the p-type ZnO thin films over a temperature range of 80K to 320K was analyzed by taking temperature dependent Van der Pauw Hall measurements of the samples. The highest calculated values of hole concentration and Hall mobility at 320K were found to be 9.26x10(19) cm(-3) and 32.4 cm(2)/V-sec respectively. These promising results would help in fabrication of ZnO based optoelectronics devices like LED's, LASER, photodiodes etc.|
|Appears in Collections:||Proceedings papers|
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