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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2016

Title: Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitrides
Authors: GUPTA, G
MAHAPATRA, S
MADHAV, LL
VARGHESE, D
AHMED, K
NOURI, F
Issue Date: 2006
Publisher: IEEE
Citation: 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL,731-732
Abstract: Negative Bias Temperature Instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (Delta V(T)) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (Delta N(IT)).
URI: http://dx.doi.org/10.1109/RELPHY.2006.251347
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15577
http://hdl.handle.net/100/2016
ISBN: 0-7803-9498-4
Appears in Collections:Proceedings papers

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