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|Title:||Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitrides|
|Citation:||2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL,731-732|
|Abstract:||Negative Bias Temperature Instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (Delta V(T)) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (Delta N(IT)).|
|Appears in Collections:||Proceedings papers|
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