Analog device and circuit performance degradation under substrate bias enhanced hot carrier stress

Abstract

In this paper, we investigate the influence of forward and reverse body bias stress on the hot carrier induced degradation of MOS analog performance parameters. The underlying physical mechanisms are identified with the help of experimental results, TCAD and Monte-Carlo simulations. We show that under for-ward body bias stress conditions, the auger recombination enhanced hot carrier injection (HCI) degrades the device and circuit performance considerably. Degradation in various analog circuits' performance is quantified by considering the individual transistors under different stress conditions.