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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2007

Title: Analog device and circuit performance degradation under substrate bias enhanced hot carrier stress
Authors: NARASIMHULU, K
RAO, VR
Keywords: submicron cmos technology
design
Issue Date: 2006
Publisher: IEEE
Citation: 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL,465-470
Abstract: In this paper, we investigate the influence of forward and reverse body bias stress on the hot carrier induced degradation of MOS analog performance parameters. The underlying physical mechanisms are identified with the help of experimental results, TCAD and Monte-Carlo simulations. We show that under for-ward body bias stress conditions, the auger recombination enhanced hot carrier injection (HCI) degrades the device and circuit performance considerably. Degradation in various analog circuits' performance is quantified by considering the individual transistors under different stress conditions.
URI: http://dx.doi.org/10.1109/RELPHY.2006.251263
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15575
http://hdl.handle.net/100/2007
ISBN: 0-7803-9498-4
Appears in Collections:Proceedings papers

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