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|Title:||Breakdown voltage and on resistance of super-junction power MOSFET : CoolMOS (TM)|
|Publisher:||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation:||PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,440-443|
|Abstract:||In this paper the concept of the new technology power MOSFETs called CoolMOS((TM)) is analyzed based on Superjunction Theory. The conventional Power MOSFET drift layer is designed first and simulated for comparing with SJ-layer technology. The results of simulation are helpful in explaining, how this new technology has overcome the limitation for high voltage power MOSFETs by breaking the Silicon Limit.|
|Appears in Collections:||Proceedings papers|
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