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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1966

Title: Breakdown voltage and on resistance of super-junction power MOSFET : CoolMOS (TM)
Authors: KONDEKAR, PN
PATIL, MB
PARIKH, CD
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,440-443
Abstract: In this paper the concept of the new technology power MOSFETs called CoolMOS((TM)) is analyzed based on Superjunction Theory. The conventional Power MOSFET drift layer is designed first and simulated for comparing with SJ-layer technology. The results of simulation are helpful in explaining, how this new technology has overcome the limitation for high voltage power MOSFETs by breaking the Silicon Limit.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15258
http://hdl.handle.net/100/1966
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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