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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1961

Title: Analytical design methodology of a novel drift-layer for super-junction power MOSFET: CoolMOS (TM)
Authors: KONDEKAR, PN
PATIL, MB
PARIKH, CD
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1304-1306
Abstract: Here a simple methodology for design of the drift layer using Super-Junction Theory is developed. Analytically designed drift layer is used to simulate the CoolMOS and it is verified for the design parameters and terminal characteristics. Simulation result shows that this methodology does give a first order design method. The On resistance and Break down voltage conflict at high voltage drift layer is also discussed along with possible solution. The limitations of the SJ-Theory for implementation in CoolMOS, are also discussed.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15257
http://hdl.handle.net/100/1961
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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