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|Title:||A large signal non-quasistatic model for short-channel MOSFET's|
|Publisher:||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation:||PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,1048-1051|
|Abstract:||A new analytical large signal non-quasi-static model is derived for short-channel MOSFETs. Existing non-quasi-static models include long-channel large and small signal models, and short-channel small signal models. No large signal analytical short-channel model had been previously reported. The model is derived by iterating on the current density and the continuity equations. Comparison with numerical device simulator data show excellent agreement, thus validating the model.|
|Appears in Collections:||Proceedings papers|
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