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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1945

Title: A large signal non-quasistatic model for short-channel MOSFET's
Authors: SAILAJA, Y
PARIKH, CD
Issue Date: 1998
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,1048-1051
Abstract: A new analytical large signal non-quasi-static model is derived for short-channel MOSFETs. Existing non-quasi-static models include long-channel large and small signal models, and short-channel small signal models. No large signal analytical short-channel model had been previously reported. The model is derived by iterating on the current density and the continuity equations. Comparison with numerical device simulator data show excellent agreement, thus validating the model.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15182
http://hdl.handle.net/100/1945
ISBN: 0-8194-2756-X
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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