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|Title:||A new quasi-static model for short-channel MOSFETs|
|Publisher:||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation:||PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,996-999|
|Abstract:||A new analytical quasi-static model is derived for the short-channel MOSFET which comprehensively accounts for the effect of the lateral field-dependence of the channel mobility. New charge equations are derived based on this formulation, and compared with those derived from the conventional approach. Interestingly, it is found that the difference between the two models is at most 3model is theoretically more sound.|
|Appears in Collections:||Proceedings papers|
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