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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1942

Title: A new quasi-static model for short-channel MOSFETs
Authors: DAMLE, P
PARIKH, CD
Issue Date: 1998
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,996-999
Abstract: A new analytical quasi-static model is derived for the short-channel MOSFET which comprehensively accounts for the effect of the lateral field-dependence of the channel mobility. New charge equations are derived based on this formulation, and compared with those derived from the conventional approach. Interestingly, it is found that the difference between the two models is at most 3model is theoretically more sound.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15179
http://hdl.handle.net/100/1942
ISBN: 0-8194-2756-X
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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