A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping

Abstract

new charge pumping technique to obtain the spatial profile of hot-carrier induced interface-state density N-it (cm(-2)) near the drain junction is proposed. It is shown that the pre-stress interface-state density is nonuniform near the junction. contrary to the assumption of constant density in earlier methods. The charge pumping edge and hence the damage distribution is uniquely obtained which does not require backup simulation and is free from the assumption of spatial uniformity of pre-stress interface-state density. Experimental procedure and data analysis is discussed in detail.