DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
|Title: ||Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications|
|Authors: ||GUPTA, M|
|Issue Date: ||2002|
|Publisher: ||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation: ||PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,652-656|
|Abstract: ||This paper presents characterization and simulation studies on the RF performance of the Gamma (Gamma) gate MOSFETs. The Gamma-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency circuits. The aim of this study is to identify the optimum Gamma-gate extension length from the gate and drain resistance point of view in aggressively scaled CMOS.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.