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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1930

Title: Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications
Authors: GUPTA, M
VIDYA, V
RAO, VR
TO, KH
WOO, JCS
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,652-656
Abstract: This paper presents characterization and simulation studies on the RF performance of the Gamma (Gamma) gate MOSFETs. The Gamma-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency circuits. The aim of this study is to identify the optimum Gamma-gate extension length from the gate and drain resistance point of view in aggressively scaled CMOS.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15254
http://hdl.handle.net/100/1930
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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