Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation

Abstract

For large-scale integration of devices, due to the problems associated with very thin layers of SiO2, a high-k dielectric becomes a necessity. In this work, Ta2O5 as a high-k dielectric in MOS device is studied. The deposition of Tantalum Pentoxide was carried out by thermal oxidation of sputtered Ta. Ta2O5 was directly deposited on silicon, without any buffer layer and its physical and electrical characteristics have been reported.