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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1925

Title: Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation
Authors: KRISHNAMOORTHI, P
CHANDORKAR, AN
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1307-1309
Abstract: For large-scale integration of devices, due to the problems associated with very thin layers of SiO2, a high-k dielectric becomes a necessity. In this work, Ta2O5 as a high-k dielectric in MOS device is studied. The deposition of Tantalum Pentoxide was carried out by thermal oxidation of sputtered Ta. Ta2O5 was directly deposited on silicon, without any buffer layer and its physical and electrical characteristics have been reported.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15253
http://hdl.handle.net/100/1925
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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