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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1920

Title: Reliability issues of ultra thin silicon nitride (a-SiN : H) by hot wire CVD for deep sub-micron CMOS technologies
Authors: WAGHMARE, PC
PATIL, SB
KUMBHAR, A
DUSANE, RO
RAO, VR
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1418-1420
Abstract: The reliability of gate dielectric is of high importance, especially as its thickness is reaching atomic dimensions. The gate leakage currents and the operating fields can be very high in devices with these ultra thin gate dielectrics. Several anomalous degradation mechanisms and breakdown characteristics are observed in these devices. New phenomena such as quasi breakdown and SILC are now considered important for accurate reliability assessment In this work we investigate a systematic reliability evaluation of high quality MNS devices made with ultra thin HWCVD nitride as the gate dielectric by taking into account these newer effects.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15252
http://hdl.handle.net/100/1920
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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