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| Title: | Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETs |
| Authors: | NAJEEB-UD-DIN
RAO, VR
VASI, J |
| Keywords: | cmos
soi |
| Issue Date: | 2002 |
| Publisher: | SPIE-INT SOC OPTICAL ENGINEERING |
| Citation: | PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,644-648 |
| Abstract: | This paper presents the characterization and simulation results of Lateral Asymmetric Channel (LAC) doped Silicon-on-Insulator (SOI) MOSFETs. The results are compared with uniformly doped SOI MOSFETs. It is shown that these LAC devices have better characteristics with many advantages. |
| URI: | http://dspace.library.iitb.ac.in/xmlui/handle/10054/15249
http://hdl.handle.net/100/1904 |
| ISBN: | 0-8194-4500-2 |
| ISSN: | 0277-786X |
| Appears in Collections: | Proceedings papers
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