DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1904

Title: Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETs
Authors: NAJEEB-UD-DIN
RAO, VR
VASI, J
Keywords: cmos
soi
Issue Date: 2002
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,644-648
Abstract: This paper presents the characterization and simulation results of Lateral Asymmetric Channel (LAC) doped Silicon-on-Insulator (SOI) MOSFETs. The results are compared with uniformly doped SOI MOSFETs. It is shown that these LAC devices have better characteristics with many advantages.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15249
http://hdl.handle.net/100/1904
ISBN: 0-8194-4500-2
ISSN: 0277-786X
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback