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|Title: ||Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETs|
|Issue Date: ||2002|
|Publisher: ||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation: ||PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,644-648|
|Abstract: ||This paper presents the characterization and simulation results of Lateral Asymmetric Channel (LAC) doped Silicon-on-Insulator (SOI) MOSFETs. The results are compared with uniformly doped SOI MOSFETs. It is shown that these LAC devices have better characteristics with many advantages.|
|Appears in Collections:||Proceedings papers|
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