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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1851

Title: Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics
Authors: MUTHA, Y
MANJULARANI, KN
LAL, R
RAO, VR
Keywords: interface
Issue Date: 2002
Publisher: MATERIALS RESEARCH SOCIETY
Citation: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,369-374
Abstract: We have studied high field degradation of Jet Vapor Deposited (JVD) silicon nitride MNSFETs with DC stress fields and compared their degradation with conventional silicon dioxide MOSFETs under identical stress conditions. We have observed that in both oxide and nitride devices, the interface degradation is higher for negative gate field. Further, the relative degradation of nitrides is always lower compared to that of oxides for both positive and negative stress conditions. AC stress experiments were performed on these ultra thin oxide transistors to understand possible degradation processes. The frequency, the peak-to-peak and offset voltage of the applied AC signal are some of the parameters that have been varied. Detailed characterization results and an analysis of the degradation mechanisms are presented in this paper. We conclude that many of the degradation results can be explained using the trapped hole recombination model.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15100
http://hdl.handle.net/100/1851
ISBN: 1-55899-652-4
ISSN: 0272-9172
Appears in Collections:Proceedings papers

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