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|Title: ||Suppression of parasitic BJT action in single pocket thin film deep sub-micron SOI MOSFETs.|
|Authors: ||DIN, N|
|Issue Date: ||2002|
|Publisher: ||MATERIALS RESEARCH SOCIETY|
|Citation: ||SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,3-8|
|Abstract: ||A study of parasitic bipolar junction transistor effects in single pocket thin film silicon-on-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.|
|Appears in Collections:||Proceedings papers|
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