Please use this identifier to cite or link to this item:
|Title:||Degradation study of ultra-thin JVD silicon nitride MNSFETs|
|Publisher:||MATERIALS RESEARCH SOCIETY|
|Citation:||SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,209-214|
|Abstract:||In this paper we discuss a new method for measuring border trap density (N-bt) in sub-micron transistors using the hysteresis in the drain current. We have used this method to measure N-bt in Jet Vapour Deposited (JVD) Silicon Nitride transistors (MNSFETs). We have extended this method to measure the energy and spatial distribution of border traps in these devices. The transient drain current varies linearly with logarthmic time. This suggests that tunneling is the dominant charge exchange mechanism of border traps. The pre-stress energy distribution is uniform whereas post-stress energy distribution shows a peak near the midgap.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.