DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1842

Title: Degradation study of ultra-thin JVD silicon nitride MNSFETs
Authors: MANJULARANI, KN
RAO, VR
VASI, J
Keywords: oxide traps
damage
Issue Date: 2002
Publisher: MATERIALS RESEARCH SOCIETY
Citation: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,209-214
Abstract: In this paper we discuss a new method for measuring border trap density (N-bt) in sub-micron transistors using the hysteresis in the drain current. We have used this method to measure N-bt in Jet Vapour Deposited (JVD) Silicon Nitride transistors (MNSFETs). We have extended this method to measure the energy and spatial distribution of border traps in these devices. The transient drain current varies linearly with logarthmic time. This suggests that tunneling is the dominant charge exchange mechanism of border traps. The pre-stress energy distribution is uniform whereas post-stress energy distribution shows a peak near the midgap.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15094
http://hdl.handle.net/100/1842
ISBN: 1-55899-652-4
ISSN: 0272-9172
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback