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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1840

Title: Gas phase chemistry study during deposition of a-Si : H and mu c-Si : H films by HWCVD using quadrupole mass spectrometry
Authors: PATIL, SB
KUMBHAR, AA
DUSANE, RO
Keywords: hydrogenated amorphous-silicon
chemical-vapor-deposition
hot-wire deposition
glow-discharge
identification
decomposition
spectroscopy
filament
silane
Issue Date: 2002
Publisher: MATERIALS RESEARCH SOCIETY
Citation: AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002,715,171-178
Abstract: Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition conditions and the gas phase chemistry was studied by in situ Quadrupole Mass Spectrometry. Attempt is made to correlate the properties of the films with the gas phase chemistry during deposition. Interestingly, unlike in PECVD, partial pressure of H-2 is higher than any other species during deposition of a-Si:H as well as muc-Si:H. Effect of hydrogen dilution on film properties and on concentration of various chemical species in the gas phase is studied. For low hydrogen dilution [H-2]/[SiH4] from 0 to 1 (where [SiH4] is 10 seem), all films deposited are amorphous with photoconductivity gain of similar to 10(6). During deposition of these amorphous films SiH2 was dominant in gas phase next to [H-2]. Interestingly [Si]/[SiH2] ratio increases from 0.4 to 0.5 as dilution increased from 0 to 1, and further to more than 1 for higher hydrogen dilution leading to [Si] dominance. At hydrogen dilution ratio 20, consequently films deposited were microcrystalline.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15092
http://hdl.handle.net/100/1840
ISBN: 1-55899-651-6
ISSN: 0272-9172
Appears in Collections:Proceedings papers

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