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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1824

Title: Potential of Cat-CVD deposited a-SiC : H as diffusion barrier layer on low-k HSQ films for ULSI
Authors: SINGH, SK
KUMBHAR, AA
KOTHARI, M
DUSANE, RO
Keywords: hydrogen silsesquioxane
interconnect
delay
Issue Date: 2006
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS,501,318-321
Abstract: Cu diffusion in the spin-on hydrogen silsesquioxane (HSQ) is a major obstacle in the low-k plus Cu technology for future ULSI devices. We have optimized the process conditions for the spin-on HSQ low-k films. Subsequent metallization with Al and Cu shows a higher leakage current for Cu contact. We have employed Cat-CVD to deposit a-SiC:H films of different thickness on HSQ and studied their effect on the leakage current with both Al and Cir electrodes. The films were deposited using silane (SiH4) and acetylene (C2H2) gases. Also, an independent determination of the dielectric constant of the Cat-CVD a-SiC:H layer has been carried out from the C-V measurements on Al/c-Si/a-SiC:H/Al structure. The electrical characteristics of the Al/c-Si/HSQ+a-SiC:H/Cu structures show almost two orders of magnitude lower leakage current compared with Al/c-Si/HSQ/Cu, indicating very good barrier properties of the a-SiC:H material. Moreover, the low dielectric value observed for a-SiC:H compares favorably to other diffusion barrier materials. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.07.215
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15075
http://hdl.handle.net/100/1824
ISSN: 0040-6090
Appears in Collections:Proceedings papers

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