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|Title: ||Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy|
|Authors: ||BHUNIA, S|
|Issue Date: ||2004|
|Publisher: ||ELSEVIER SCIENCE SA|
|Citation: ||THIN SOLID FILMS,464,244-247|
|Abstract: ||In this study, a detailed investigation of the growth of vertically oriented and surface mounted InP nanowires has been carried out. They were grown by metal organic vapor phase epitaxy on semi-insulating <111> B-oriented InP wafers using An nanoparticle-assisted vapor-liquid-solid growth technique. The proper conditions for the stable nanowire growth were obtained by systematic variation of the pre-growth annealing and the growth temperatures and were found to be 540 and 440 degreesC, respectively. The variation in the length of the nanowires was also studied as a function of time. Transmission electron diffraction studies carried out on the single nanowires revealed the <111> growth direction with the presence of rotational twin structures, the axis of rotation being the growth direction. Analysis of the high-resolution transmission electron microscopic images shows that the orientation and kinks on the nanowires were controlled by the distribution of these twin structures. (C) 2004 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Proceedings papers|
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