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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1791

Title: AMPS-1D simulation studies of electronic transport in n(+)-mu c-Si : H thin films
Authors: TRIPATHI, S
DUSANE, RO
Keywords: microcrystalline silicon
carrier transport
model
Issue Date: 2006
Publisher: ELSEVIER SCIENCE BV
Citation: JOURNAL OF NON-CRYSTALLINE SOLIDS,352,1105-1108
Abstract: To study the electronic transport in highly n-doped microcrystalline silicon (n(+)-mu c-Si:H) thin films, grain-boundary trapping model is implemented in AMPS (analysis of microelectronic and photonic structure)-1D. This approach is based on the traditional thermionic-emission model and considering the electronic transport parallel to the substrate. In spite of its simplicity, the model leads to the simulated values of activation energy, free carrier concentration, interface trap charge density and mobility which are in good agreement with the referred Hall effect measurement results for electron cyclotron resonance-chemical vapor deposited (ECR-CVD) highly n-doped mu c-Si:H thin films. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.132
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15038
http://hdl.handle.net/100/1791
ISSN: 0022-3093
Appears in Collections:Proceedings papers

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