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|Title: ||Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma|
|Authors: ||CHOKSI, AJ|
|Issue Date: ||1992|
|Publisher: ||ELSEVIER SCIENCE SA LAUSANNE|
|Citation: ||THIN SOLID FILMS,220,50-54|
|Abstract: ||The effects of growth conditions on properties of silicon dioxide grown in oxygen/argon plasma are described. An inductively coupled r.f. plasma anodization system was designed in which various experimental parameters could be varied and monitored. Its design is described first and then we examine the effects of some experimental conditions on the electrical properties of MOS capacitors fabricated with the plasma oxides. A qualitative model of the growth mechanism of SiO2 in oxygen plasma has been described. The data obtained in this investigation in addition to our work reported earlier on dependence of electrical properties on the anodization current density and the gas pressure in the plasma, is helpful in optimizing the growth conditions to produce device grade oxide films.|
|Appears in Collections:||Proceedings papers|
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