Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1747

Title:	Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies
Authors:	PATIL, SB VAIDYA, S KUMBHAR, A DUSANE, RO CHANDORKAR, AN RAO, VR
Keywords:	chemical-vapor-deposition films
Issue Date:	2000
Publisher:	SPIE-INT SOC OPTICAL ENGINEERING
Citation:	PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II,3975,879-882
Abstract:	In this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage.
URI:	http://dspace.library.iitb.ac.in/xmlui/handle/10054/15223 http://hdl.handle.net/100/1747
ISBN:	0-8194-3601-1
ISSN:	0277-786X
Appears in Collections:	Proceedings papers

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