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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1736

Title: Reduction of the anomalous VT behavior in MOSFETs with high-kappa/metal gate stacks
Authors: FERAIN, I
PANTISANO, L
KOTTANTHARAYIL, A
PETRY, J
TROJMAN, L
COLLAERT, N
JURCZAK, M
DE MEYER, K
Issue Date: 2007
Publisher: ELSEVIER SCIENCE BV
Citation: MICROELECTRONIC ENGINEERING,84,1882-1885
Abstract: This study investigates the impact of different nitridation processes on hafnium silicon oxynitride (HfSiON) dielectrics. It is demonstrated that the threshold voltage (V-T vs. L-g) behavior at short gate lengths is strongly impacted by the nitridation process, depending on the Hf/(Hf+Si) ratio and the HfSiON thickness. A Plasma nitridation in oxidizing ambient results in a modification of the dielectric that can explain the anomalous V-T behavior in devices integrated with hafnium-based dielectrics and metal gate. Reduction in anomalous V-T behavior and limited gate leakage is achieved by applying a thermal nitridation in a NH3 ambient on Hf-rich silicon oxynitride.
URI: http://dx.doi.org/10.1016/j.mee.2007.04.074
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14898
http://hdl.handle.net/100/1736
ISSN: 0167-9317
Appears in Collections:Proceedings papers

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