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|Title: ||Reduction of the anomalous VT behavior in MOSFETs with high-kappa/metal gate stacks|
|Authors: ||FERAIN, I|
DE MEYER, K
|Issue Date: ||2007|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||MICROELECTRONIC ENGINEERING,84,1882-1885|
|Abstract: ||This study investigates the impact of different nitridation processes on hafnium silicon oxynitride (HfSiON) dielectrics. It is demonstrated that the threshold voltage (V-T vs. L-g) behavior at short gate lengths is strongly impacted by the nitridation process, depending on the Hf/(Hf+Si) ratio and the HfSiON thickness. A Plasma nitridation in oxidizing ambient results in a modification of the dielectric that can explain the anomalous V-T behavior in devices integrated with hafnium-based dielectrics and metal gate. Reduction in anomalous V-T behavior and limited gate leakage is achieved by applying a thermal nitridation in a NH3 ambient on Hf-rich silicon oxynitride.|
|Appears in Collections:||Proceedings papers|
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