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|Title: ||Polarization modulation in GaN-based double-barrier resonant tunneling diodes|
|Authors: ||SANKARANARAYANAN, S|
|Issue Date: ||2014|
|Publisher: ||IOP PUBLISHING LTD|
|Citation: ||APPLIED PHYSICS EXPRESS, 7(9)|
|Abstract: ||The effect of polarization modulation on GaN-based double-barrier resonant tunneling diodes is theoretically investigated. The polarization field is shown to improve the performance of these devices by increasing the peak current, peak-to-valley ratio, and negative differential conductance. The high sensitivity of the quantum-well bound energy state with the applied bias explains the observed characteristics. We have further demonstrated that a thin In0.1Ga0.9N layer can significantly improve the performance of the devices by introducing an additional polarization field beyond the second barrier, which reduces the device series resistance and increases the effective second barrier height and width. (C) 2014 The Japan Society of Applied Physics|
|Appears in Collections:||Article|
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