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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1691

Title: A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
Authors: MAHAPATRA, S
RAO, VR
PARIKH, CD
VASI, J
CHENG, B
WOO, JCS
Issue Date: 1999
Publisher: ELSEVIER SCIENCE BV
Citation: MICROELECTRONIC ENGINEERING,48,193-196
Abstract: Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 mu m have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel V-T profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 mu m channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.
URI: http://dx.doi.org/10.1016/S0167-9317(99)00369-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14859
http://hdl.handle.net/100/1691
ISSN: 0167-9317
Appears in Collections:Proceedings papers

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