A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping

Abstract

Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 mu m have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel V-T profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 mu m channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.