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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1675

Title: ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator
Authors: MAHAPATRA, S
MANJULARANI, KN
RAO, VR
VASI, J
Keywords: carrier-induced interface
charge-pumping technique
Issue Date: 2000
Publisher: SPIE-INT SOC OPTICAL ENGINEERING
Citation: PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II,3975,803-810
Abstract: As metal-oxide-semiconductor (MOS) transistors scale down, the thickness of the gate oxide must eventually scale to 1-2 nm. For such thin insulators, silicon dioxide poses problems of direct tunneling. This can be ameliorated by the use of jet vapour deposited (JVD) silicon nitride, which shows excellent electrical properties. This paper reviews the characteristics of JVD nitrides and MOS devices made with them. The paper also presents some new results obtained on 100 nm channel length MOS transistors using JVD nitrides, including the hot-carrier performance of such devices.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15221
http://hdl.handle.net/100/1675
ISBN: 0-8194-3601-1
ISSN: 0277-786X
Appears in Collections:Proceedings papers

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