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|Title: ||ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator|
|Authors: ||MAHAPATRA, S|
|Keywords: ||carrier-induced interface|
|Issue Date: ||2000|
|Publisher: ||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation: ||PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II,3975,803-810|
|Abstract: ||As metal-oxide-semiconductor (MOS) transistors scale down, the thickness of the gate oxide must eventually scale to 1-2 nm. For such thin insulators, silicon dioxide poses problems of direct tunneling. This can be ameliorated by the use of jet vapour deposited (JVD) silicon nitride, which shows excellent electrical properties. This paper reviews the characteristics of JVD nitrides and MOS devices made with them. The paper also presents some new results obtained on 100 nm channel length MOS transistors using JVD nitrides, including the hot-carrier performance of such devices.|
|Appears in Collections:||Proceedings papers|
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