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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/16725

Title: Fabrication and Analysis of a Si/Si0.55Ge0.45 Heterojunction Line Tunnel FET
Authors: WALKE, AM
VANDOOREN, A
ROOYACKERS, R
LEONELLI, D
HIKAVYY, A
LOO, R
VERHULST, AS
KAO, KH
HUYGHEBAERT, C
GROESENEKEN, G
RAO, VR
BHUWALKA, KK
HEYNS, MM
COLLAERT, N
THEAN, AVY
Keywords: Field-induced quantum confinement (FIQC)
FIQC effect
gate length and width dependence
line tunneling
TFET fabrication
TFET simulations
TFET variability
tunnel field effect transistor (TFET)
Issue Date: 2014
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(3)707-715
Abstract: This paper presents a new integration scheme to fabricate a Si/Si0.55Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-mu m gate length device shows ON current in excess of 20 mu A/mu m at V-GS = V-DS = 1.2 V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by similar to 0.35 V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.
URI: http://dx.doi.org/10.1109/TED.2014.2299337
http://dspace.library.iitb.ac.in/jspui/handle/100/16725
ISSN: 0018-9383
1557-9646
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