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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/16353

Title: Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H
Authors: PANDEY, V
SANAGAVARAPU, L
DUSANE, RO
Issue Date: 2014
Publisher: CANADIAN SCIENCE PUBLISHING, NRC RESEARCH PRESS
Citation: CANADIAN JOURNAL OF PHYSICS, 92(7/8)749-752
Abstract: Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450 degrees C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400 degrees C showed hole concentration of the order of 10(18) cm(-3) and the Hall mobility was measured to be 13.5 cm(2)V(-1)s(-1). The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.
URI: http://dx.doi.org/10.1139/cjp-2013-0612
http://dspace.library.iitb.ac.in/jspui/handle/100/16353
ISSN: 0008-4204
1208-6045
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