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|Title: ||Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H|
|Authors: ||PANDEY, V|
|Issue Date: ||2014|
|Publisher: ||CANADIAN SCIENCE PUBLISHING, NRC RESEARCH PRESS|
|Citation: ||CANADIAN JOURNAL OF PHYSICS, 92(7/8)749-752|
|Abstract: ||Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450 degrees C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400 degrees C showed hole concentration of the order of 10(18) cm(-3) and the Hall mobility was measured to be 13.5 cm(2)V(-1)s(-1). The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.|
|Appears in Collections:||Article|
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