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|Title:||Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation|
|Publisher:||AMER INST PHYSICS|
|Citation:||JOURNAL OF APPLIED PHYSICS, 116(12)|
|Abstract:||The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current-voltage (I-V) characteristics show an excellent rectification ratio (I-ON/I-OFF = 10(5)) at a bias voltage of +/- 1V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I-V (0.62 eV) and high frequency capacitance-voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35-2.5 mu m under different reverse bias conditions (0.0-1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV. (C) 2014 AIP Publishing LLC.|
|Appears in Collections:||Article|
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