DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/16269

Title: Power and efficiency analysis of a realistic resonant tunneling diode thermoelectric
Authors: AGARWAL, A
Issue Date: 2014
Abstract: Low-dimensional systems with sharp features in the density of states have been proposed as a means for improving the efficiency of thermoelectric devices. Quantum dot systems, which offer the sharpest density of states achievable, however, suffer from low power outputs while bulk (3-D) thermoelectrics, while displaying high power outputs, offer very low efficiencies. Here, we analyze the use of a resonant tunneling diode structure that combines the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number of current carrying transverse modes that enhances the total power output. We show that this device can achieve a high power output (similar to 0.3 MW/m(2)) at efficiencies of similar to 40% of the Carnot efficiency due to the contribution from these transverse momentum states at a finite bandwidth of kT/2. We then provide a detailed analysis of the physics of charge and heat transport with insights on parasitic currents that reduce the efficiency. Finally, a comparison between the resonant tunneling diode and a quantum dot device with comparable bandwidth reveals that a similar performance requires ultra-dense areal quantum dot densities of similar to 10(12)/cm(2). (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4888859
ISSN: 0003-6951
Appears in Collections:Article

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback