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|Title: ||Power and efficiency analysis of a realistic resonant tunneling diode thermoelectric|
|Authors: ||AGARWAL, A|
|Issue Date: ||2014|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 105(1)|
|Abstract: ||Low-dimensional systems with sharp features in the density of states have been proposed as a means for improving the efficiency of thermoelectric devices. Quantum dot systems, which offer the sharpest density of states achievable, however, suffer from low power outputs while bulk (3-D) thermoelectrics, while displaying high power outputs, offer very low efficiencies. Here, we analyze the use of a resonant tunneling diode structure that combines the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number of current carrying transverse modes that enhances the total power output. We show that this device can achieve a high power output (similar to 0.3 MW/m(2)) at efficiencies of similar to 40% of the Carnot efficiency due to the contribution from these transverse momentum states at a finite bandwidth of kT/2. We then provide a detailed analysis of the physics of charge and heat transport with insights on parasitic currents that reduce the efficiency. Finally, a comparison between the resonant tunneling diode and a quantum dot device with comparable bandwidth reveals that a similar performance requires ultra-dense areal quantum dot densities of similar to 10(12)/cm(2). (C) 2014 AIP Publishing LLC.|
|Appears in Collections:||Article|
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