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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/16032

Title: Electrical spin injection using GaCrN in a GaN based spin light emitting diode
Authors: BANERJEE, D
ADARI, R
SANKARANARAYAN, S
KUMAR, A
GANGULY, S
ALDHAHERI, RW
HUSSAIN, MA
BALAMESH, AS
SAHA, D
Issue Date: 2013
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 103(24)
Abstract: We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of similar to 2.5% is obtained at 200 K. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4848836
http://dspace.library.iitb.ac.in/jspui/handle/100/16032
ISSN: 0003-6951
1077-3118
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