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|Title: ||Electrical spin injection using GaCrN in a GaN based spin light emitting diode|
|Authors: ||BANERJEE, D|
|Issue Date: ||2013|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 103(24)|
|Abstract: ||We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of similar to 2.5% is obtained at 200 K. (C) 2013 AIP Publishing LLC.|
|Appears in Collections:||Article|
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