Please use this identifier to cite or link to this item:
|Title:||Enhancement of anomalous Hall effect in Si/Fe multilayers|
|Publisher:||IOP PUBLISHING LTD|
|Citation:||JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46(37)|
|Abstract:||Anomalous Hall effect (AHE) studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient were obtained in [Si(50 angstrom)/Fe(t(Fe))](20) multilayers when decreasing the Fe layer thickness from 100 to 20 angstrom. The largest anomalous Hall coefficient (R-s) of 1.4 x 10(-7) Omega m T-1 was found for t(Fe) = 20 angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R-0 was about two orders of magnitude larger than that of pure Fe. The R-s was found to vary with the longitudinal electronic resistivity, rho as R-s alpha rho(2.2), indicating the role of interfaces for the enhancement of the AHE in the multilayers. An increase of Hall sensitivity from 9 m Omega T-1 to 1.2 Omega T-1 was observed on decreasing t(Fe) from 100 to 10 angstrom. The high Hall sensitivity obtained was about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.