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|Title: ||Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers|
|Authors: ||KAMATH, A|
|Keywords: ||Back barrier|
high electron mobility (HEMT)
two-dimensional electron gas (2DEG)
|Issue Date: ||2012|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE ELECTRON DEVICE LETTERS, 33(12)1690-1692|
|Abstract: ||We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.|
|Appears in Collections:||Article|
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