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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/15507

Title: Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
Authors: KAMATH, A
PATIL, T
ADARI, R
BHATTACHARYA, I
GANGULY, S
ALDHAHERI, RW
HUSSAIN, MA
SAHA, D
Keywords: Back barrier
GaN
high electron mobility (HEMT)
two-dimensional electron gas (2DEG)
Issue Date: 2012
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 33(12)1690-1692
Abstract: We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.
URI: http://dx.doi.org/10.1109/LED.2012.2218272
http://dspace.library.iitb.ac.in/jspui/handle/100/15507
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