DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1537

Title: Studies of defects and impurities in diamond thin films
Authors: SHARDA, T
SIKDER, AK
MISRA, DS
COLLINS, AT
BHARGAVA, S
BIST, HD
VELUCHAMY, P
MINOURA, H
KABIRAJ, D
AWASTHI, DK
SELVAM, P
Keywords: chemical-vapor-deposition
cvd diamond
polycrystalline diamond
optical-centers
cathodoluminescence
plasma
spectroscopy
nucleation
nitrogen
hydrogen
Issue Date: 1998
Publisher: ELSEVIER SCIENCE SA
Citation: DIAMOND AND RELATED MATERIALS,7,250-254
Abstract: Diamond thin films were grown on silicon substrates using microwave plasma chemical vapour deposition at various microwave power densities (MPD). Three sets of the films were grown for various thicknesses. The films were characterised using micro-Raman spectroscopy, photoluminescence (PL), cathodoluminescence (CL) and X-ray photoelectron spectroscopy (XPS). Elastic recoil detection analysis (ERDA) was used to determine concentrations of light impurities (N and O), Micro-Raman spectroscopy shows a systematic variation in the non-diamond to diamond carbon content with MPD, Various defect centers related mainly with nitrogen were observed in PL and CL spectra of the films. A sharp feature was observed at 1.68 eV in all the spectra. This peak is attributed to Si impurity in diamond films. Interestingly, the intensity of the peak increases with increase in MPD, The broad band A in the CL spectra has contributions from both green and blue regions, and the intensity ratio of the green to blue region varies with MPD. The spectra of the films of various thickness were also compared, and it was found that the Si content of the films decreases with increasing thickness. ERDA results indicate that the films contain 0.1-0.6% N and O as impurities. The interface composition of the films as a function of MPD was investigated using XPS, and the increase in the Si content of the films was correlated with the change in composition of the diamond/silicon interface. (C) 1998 Elsevier Science S.A.
URI: http://dx.doi.org/10.1016/S0925-9635(97)00265-3
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14750
http://hdl.handle.net/100/1537
ISSN: 0925-9635
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback