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|Title:||Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics|
|Keywords:||Inductively Coupled Plasma Chemical Vapor Deposition (Icpcvd)|
Silicon Nanocrystal (Si-Ncs)
Tandem Solar Cell
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE JOURNAL OF PHOTOVOLTAICS, 3(4)1279-1286|
|Abstract:||Superior optical properties of Si-nanocrystals (Si-NCs) compared with bulk Si, particularly tunability of bandgap by controlling size, can be exploited for realizing next-generation Si tandem solar cells. In view of this, optical bandgap tunability of Si-NCs fabricated by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) is presented. The SiOx<2/SiO2 superlattice approach was used for realizing Si-NCs with tight size control. Deposition time of SiOx sublayer and, hence, the related thickness (T-SRO), was used as a variable parameter to realize Si-NCs of varying sizes. Formation of Si-NCs was verified by transmission electron microscopy and Raman spectroscopy. Using XPS analysis, the stoichiometry parameter x was estimated to be 0.82 for SiOx sublayer. The optical bandgap E-Tauc estimated using Tauc analysis was observed to be tunable from 1.57 to 2.52 eV as the size of Si-NCs was varied from 5.8 (+/- 0.5) to 2 (+/- 0.4) nm, respectively.|
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