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|Title:||Trap characterization of silicon nitride thin films by a modified trap spectroscopy technique|
|Publisher:||AMER INST PHYSICS|
|Citation:||JOURNAL OF APPLIED PHYSICS, 114(15)|
|Abstract:||Energy levels of traps in silicon nitride are determined using a modified trap spectroscopy method, based on filling of traps using electrical stress followed by optical detrapping, in a metal-silicon nitride-silicon structure. Indium tin oxide with 84% transmittance is used as transparent electrode. Photon energy dependent shift in the flat band voltage is used to estimate type and energetic position of the traps. Here, we report detection of two prominent hole trap levels at 0.5 and 1.1 eV above the valance band edge. The study suggests that phonons hardly participate in the detrapping process of holes in Si3N4. (C) 2013 AIP Publishing LLC.|
|Appears in Collections:||Article|
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