Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/15187
Title: Trap characterization of silicon nitride thin films by a modified trap spectroscopy technique
Authors: MIDYA, K
DHAR, S
KOTTANTHARAYIL, A
Issue Date: 2013
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 114(15)
Abstract: Energy levels of traps in silicon nitride are determined using a modified trap spectroscopy method, based on filling of traps using electrical stress followed by optical detrapping, in a metal-silicon nitride-silicon structure. Indium tin oxide with 84% transmittance is used as transparent electrode. Photon energy dependent shift in the flat band voltage is used to estimate type and energetic position of the traps. Here, we report detection of two prominent hole trap levels at 0.5 and 1.1 eV above the valance band edge. The study suggests that phonons hardly participate in the detrapping process of holes in Si3N4. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4825049
http://dspace.library.iitb.ac.in/jspui/handle/100/15187
ISSN: 0021-8979
1089-7550
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