Please use this identifier to cite or link to this item:
|Title:||Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics|
Program Erase Transient
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE ELECTRON DEVICE LETTERS, 34(9)1136-1138|
|Abstract:||Reduced multilayer graphene (rMLG) is investigated as a charge storage layer (CSL) in conventional floating gate (FG) flash memory structure. A large memory window of 9.4 V at +/- 20-V program/erase and robust 10-years data retention at 150 degrees C is demonstrated. Significant over-erase observed in these memory devices signifies hole storage in the rMLG sheets. Fast programming and clear saturation of the program transients observed with the rMLG CSL memory devices suggest reduced ballistic transport in the plane perpendicular to the graphene. Activation energies for programmed and erased state retention losses are calculated as 1.05 and 1.11 eV, respectively. These observations establish the potential of rMLG sheets as a replacement of conventionally used polycrystalline silicon FG.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.