Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/15181
Title: Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics
Authors: MISHRA, A
JANARDANAN, A
KHARE, M
KALITA, H
KOTTANTHARAYIL, A
Keywords: Activation Energy
Flash Memory
Multilayer Graphene
Program Erase Transient
Retention
Issue Date: 2013
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 34(9)1136-1138
Abstract: Reduced multilayer graphene (rMLG) is investigated as a charge storage layer (CSL) in conventional floating gate (FG) flash memory structure. A large memory window of 9.4 V at +/- 20-V program/erase and robust 10-years data retention at 150 degrees C is demonstrated. Significant over-erase observed in these memory devices signifies hole storage in the rMLG sheets. Fast programming and clear saturation of the program transients observed with the rMLG CSL memory devices suggest reduced ballistic transport in the plane perpendicular to the graphene. Activation energies for programmed and erased state retention losses are calculated as 1.05 and 1.11 eV, respectively. These observations establish the potential of rMLG sheets as a replacement of conventionally used polycrystalline silicon FG.
URI: http://dx.doi.org/10.1109/LED.2013.2272643
http://dspace.library.iitb.ac.in/jspui/handle/100/15181
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