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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1511

Title: Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs
Authors: ANIL, K
MAHAPATRA, S
RAO, VR
EISELE, I
Keywords: silicon mosfets
degradation
currents
field
model
Issue Date: 2001
Publisher: INST PURE APPLIED PHYSICS
Citation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,40(4B)2621-2626
Abstract: Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.
URI: http://dx.doi.org/10.1143/JJAP.40.2621
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14728
http://hdl.handle.net/100/1511
ISSN: 0021-4922
Appears in Collections:Proceedings papers

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