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|Title:||Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs|
|Publisher:||INST PURE APPLIED PHYSICS|
|Citation:||JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,40(4B)2621-2626|
|Abstract:||Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.|
|Appears in Collections:||Proceedings papers|
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