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|Title: ||Development of low temperature RF magnetron sputtered ITO films on flexible substrate|
|Authors: ||MUNESHWAR, TP|
|Keywords: ||oxygen partial-pressure|
|Issue Date: ||2010|
|Publisher: ||ELSEVIER SCIENCE BV|
|Citation: ||SOLAR ENERGY MATERIALS AND SOLAR CELLS,94(9)1448-1450|
|Abstract: ||Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton (R) by the RF magnetron sputtering is reported in this paper. (C) 2010 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Proceedings papers|
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