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|Title:||Plasma Grown Oxy-Nitride Films for Silicon Surface Passivation|
Surface Recombination Velocity
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE ELECTRON DEVICE LETTERS, 34(7)918-920|
|Abstract:||This letter investigates the potential of a low-temperature plasma grown silicon oxy-nitride (SiOxNy) film for surface passivation of silicon surfaces. Using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy, the film composition is studied to identify the process condition for obtaining a smooth Si-SiOxNy interface. D-it in the order of similar to 10(10)eV(-1)cm(-2), is obtained on capping the SiOxNy with a silicon nitride (SiNv:H) film, followed by annealing at 550 degrees C for 2 s. A surface recombination velocity of 50 cm/s is obtained for the SiOxNy-SiNv:H stack when annealed at 400 degrees C for 2 s. The growth of an interfacial SiOxNy prior to SiNv:H deposition is found to improve the thermal stability of the silicon nitride passivation. The stack could be an interesting option with further optimization for surface passivation of n-type surfaces in mono- and multicrystalline silicon solar cells.|
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