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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1462

Title: Study of swift (100 MeV) Fe9+ ion irradiated gallium antimonide
Authors: JADHAV, V
DUBEY, SK
DUBEY, RL
TRIPATHI, S
YADAV, AD
GUPTA, SJ
RAO, TKG
KANJILAL, D
Keywords: optical-properties
implanted gasb
photoluminescence
damage
Issue Date: 2008
Publisher: ELSEVIER SCIENCE BV
Citation: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,266(8)1764-1767
Abstract: The effect of 100 MeV irradiation of iron ions in p-type gallium antimonide for ion fluences varying from 1 x 10(11) to 5 x 10(13) cm(-2) was investigated using Raman scattering, Fourier transform infrared and X-ray diffraction measurements. Raman spectra showed a strong peak at 232.82 cm(-1) (LO) and a weak peak at 223.79 cm(-1) (TO). The peaks were shifted towards higher wave number compared to non-irradiated sample indicating the presence of stress in the irradiated samples. The increase of optical absorbance of samples irradiated with different fluences indicates the increase in the amount of disorder and defect concentrations with fluence. The intensity of the XRD peak (20 = 61.07 degree) of the irradiated samples for (4 0 0) reflections was found to decrease with ion fluence. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2008.02.027
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14616
http://hdl.handle.net/100/1462
ISSN: 0168-583X
Appears in Collections:Proceedings papers

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