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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/14559

Title: Room temperature ferromagnetism in thermally diffused Cr in GaN
Authors: SUGGISETTI, P
BANERJEE, D
ADARI, R
PANDE, N
PATIL, T
GANGULY, S
SAHA, D
Issue Date: 2013
Publisher: AMER INST PHYSICS
Citation: AIP ADVANCES, 3(3)
Abstract: We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in electron carrier concentration due to the presence of Cr. Optical property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up to 300 K with no significant change in saturation magnetization. Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4799716]
URI: http://dx.doi.org/10.1063/1.4799716
http://dspace.library.iitb.ac.in/jspui/handle/100/14559
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