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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1442

Title: Resistivity and L(III)-edge absorption studies in valence fluctuation system Ce2Ni3Si5
Authors: MAZUMDAR, C
NAGARAJAN, R
GODART, C
GUPTA, LC
PADALIA, BD
VIJAYARAGHAVAN, R
Keywords: cerium compound
Issue Date: 1996
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS,79(8)6347-6348
Abstract: From our x-ray (L(III)-edge) absorption (XAS) investigations of Ce2Ni3Si5, we show that Ce-valence is temperature dependent; it is 3.07 and 3.11 at 280 and 8 K, respectively. We also report on our resistivity measurements of two related materials Ce(2-x)R(x)Ni(3)Si(5) (R=Y, Gd and x=0.1). Absence of any qualitative difference in the resistivities of these two samples suggests that the enhancement of resistivity at low temperature on introduction of impurity atoms is due to Kondo hole scattering implying that Ce2Ni3Si5 is a concentrated Kondo system. (C) 1996 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.362691
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14613
http://hdl.handle.net/100/1442
ISSN: 0021-8979
Appears in Collections:Proceedings papers

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