Resistivity and L(III)-edge absorption studies in valence fluctuation system Ce2Ni3Si5

Abstract

From our x-ray (L(III)-edge) absorption (XAS) investigations of Ce2Ni3Si5, we show that Ce-valence is temperature dependent; it is 3.07 and 3.11 at 280 and 8 K, respectively. We also report on our resistivity measurements of two related materials Ce(2-x)R(x)Ni(3)Si(5) (R=Y, Gd and x=0.1). Absence of any qualitative difference in the resistivities of these two samples suggests that the enhancement of resistivity at low temperature on introduction of impurity atoms is due to Kondo hole scattering implying that Ce2Ni3Si5 is a concentrated Kondo system. (C) 1996 American Institute of Physics.