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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/14335

Title: High-performance, long-wave (similar to 10.2 mu m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In(0.21)Al(0.21)Ga(0.58)As capping
Authors: CHAKRABARTI, S
ADHIKARY, S
HALDER, N
AYTAC, Y
PERERA, AGU
Keywords: HIGH-TEMPERATURE OPERATION
FOCAL-PLANE ARRAY
A-WELL DETECTOR
LARGE RESPONSIVITY
ROOM-TEMPERATURE
HIGH DETECTIVITY
WAVELENGTH
Issue Date: 2011
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS,99(18)-
Abstract: A high-performance InGaAs/GaAs vertical quantum dot infrared photodetector (QDIP) with combined barrier of quaternary In(0.21)Al(0.21)Ga(0.58)As and GaAs was investigated in this study. A dominant long wavelength (similar to 10.2 mu m) response was observed from the device. The device demonstrates large responsivity (2.16 A/W) with narrow spectral-width (Delta lambda/lambda similar to 0.14) and high detectivity (1.01 x 10(11) cm Hz(1/2)/W at 0.3 V) at 10.2 mu m at 77 K. In addition, the device has also produced a detectivity in the order of 6.4 x 10(10) cm Hz(1/2)/W at 100 K at a bias of 0.2 V, indicating its suitability for high-temperature operations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657142]
URI: http://dx.doi.org/10.1063/1.3657142
http://dspace.library.iitb.ac.in/jspui/handle/100/14335
ISSN: 0003-6951
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