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|Title: ||High-performance, long-wave (similar to 10.2 mu m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In(0.21)Al(0.21)Ga(0.58)As capping|
|Authors: ||CHAKRABARTI, S|
|Keywords: ||HIGH-TEMPERATURE OPERATION|
|Issue Date: ||2011|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS,99(18)-|
|Abstract: ||A high-performance InGaAs/GaAs vertical quantum dot infrared photodetector (QDIP) with combined barrier of quaternary In(0.21)Al(0.21)Ga(0.58)As and GaAs was investigated in this study. A dominant long wavelength (similar to 10.2 mu m) response was observed from the device. The device demonstrates large responsivity (2.16 A/W) with narrow spectral-width (Delta lambda/lambda similar to 0.14) and high detectivity (1.01 x 10(11) cm Hz(1/2)/W at 0.3 V) at 10.2 mu m at 77 K. In addition, the device has also produced a detectivity in the order of 6.4 x 10(10) cm Hz(1/2)/W at 100 K at a bias of 0.2 V, indicating its suitability for high-temperature operations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657142]|
|Appears in Collections:||Article|
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