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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/14332

Title: Gate control and amplification of magnetoresistance in a three-terminal device
Authors: KUM, H
JAHANGIR, S
BASU, D
SAHA, D
BHATTACHARYA, P
Keywords: EFFECT TRANSISTOR
SEMICONDUCTOR
INJECTION
Issue Date: 2011
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS,99(15)-
Abstract: Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500% at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently. (C) 2011 American Institute of Physics. [doi:10.1063/13652765]
URI: http://dx.doi.org/10.1063/1.3652765
http://dspace.library.iitb.ac.in/jspui/handle/100/14332
ISSN: 0003-6951
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