Please use this identifier to cite or link to this item:
|Title:||Gate control and amplification of magnetoresistance in a three-terminal device|
|Publisher:||AMER INST PHYSICS|
|Citation:||APPLIED PHYSICS LETTERS,99(15)-|
|Abstract:||Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500% at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently. (C) 2011 American Institute of Physics. [doi:10.1063/13652765]|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.