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|Title: ||Gate control and amplification of magnetoresistance in a three-terminal device|
|Authors: ||KUM, H|
|Keywords: ||EFFECT TRANSISTOR|
|Issue Date: ||2011|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS,99(15)-|
|Abstract: ||Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500% at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently. (C) 2011 American Institute of Physics. [doi:10.1063/13652765]|
|Appears in Collections:||Article|
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