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|Title: ||Optical detection of the defects associated with the magnetic properties observed in GaN:Gd layers grown by reactive molecular beam epitaxy|
|Authors: ||MISHRA, JK|
|Issue Date: ||2011|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS,99(7)-|
|Abstract: ||The effect of annealing on the magnetic and the optoelectronic properties of Gd-doped GaN layers, which are grown by reactive molecular beam epitaxy technique, has been investigated using photoluminescence, photoconductivity, and vibrating sample magnetometry techniques. The study reveals that the multiple types of defects are formed in GaN layers during the Gd incorporation. However, the density of only one defect type, which results in a strong luminescence feature at 3.05 eV in the photoluminescence spectra recorded at low temperatures in GaN:Gd layers, has been found to decrease significantly upon annealing and at the same time, the saturation magnetization is also observed to reduce, suggesting that these defects are responsible for the magnetic properties observed in this system. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626034]|
|Appears in Collections:||Article|
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