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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/14327

Title: Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars
Authors: GHOSH, A
BHASKER, HP
MUKHERJEE, A
KUNDU, T
SINGH, BP
DHAR, S
DE, S
CHOWDHURY, A
Keywords: OPTICAL-PROPERTIES
LAYERS
NANOWIRES
SAPPHIRE
GROWTH
HVPE
Issue Date: 2011
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS,110(3)-
Abstract: High density of c-axis oriented tapered GaN nanopillars are fabricated simply by exposing GaN epitaxial layers in argon-chlorine plasma without any prior lithographic processing. The nature and the formation process of the pillars are investigated by different optical and structural characterization techniques. Our study reveals that the pillars are columnar inversion domains with distinctly different optical properties as compared to the bulk. These are formed as a result of a polarity selective etching process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622142]
URI: http://dx.doi.org/10.1063/1.3622142
http://dspace.library.iitb.ac.in/jspui/handle/100/14327
ISSN: 0021-8979
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